Title :
Intensity modulation at 1.06 mu m wavelength using ultranarrow GaInAsP quantum wells
Author :
Zucker, J.E. ; Bar-Joseph, I. ; Divino, M.D. ; Chemta, D.S.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
7/20/1989 12:00:00 AM
Abstract :
Demonstrates large electroabsorption at 1.06 mu m associated with field-induced tunnelling in ultranarrow GaInAsP quantum wells.
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; optical modulation; semiconductor quantum wells; tunnelling; 1.06 micron; GaInAsP; electroabsorption; field-induced tunnelling; intensity modulation; quantum wells;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890651
