Title :
Threshold voltage of submicron Ga0.47In0.53As HIGFETs
Author :
Feller, M.D. ; Shunk, S.C. ; Kuo, J.M. ; Tennant, D.M. ; Tell, B.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
7/20/1989 12:00:00 AM
Abstract :
Presents threshold voltage data for Al0.48In0.52As/Ga0.47In0.53As/InP heterostructure insulated gate FETs (HIGFETs) with gate lengths from 1.2 mu m to 0.4 mu m. The refractory-gate, self-aligned fabrication process was applied to MBE-grown structures with 300 AA Ga0.47In0.53As channels and semi-insulating superlattice buffers to achieve sharp pinchoff with excellent threshold uniformity. HIGFETs with Lg=1.2 mu m showed a threshold voltage of -0.076+or-0.019 V, making them well-suited to application in direct-coupled FET logic (DCFL) circuits.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor superlattices; -0.095 to -0.057 V; 0.4 to 1.2 micron; Al 0.48In 0.52AsGa 0.47In 0.53As-InP; MBE-grown structures; direct-coupled FET logic; gate lengths; heterostructure insulated gate FETs; self-aligned fabrication process; semi-insulating superlattice buffers; sharp pinchoff; threshold uniformity; threshold voltage data;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890652
