DocumentCode
1171430
Title
Low-voltage multiple quantum well reflection modulator with on:off ratio >100:1
Author
Whitehead, M. ; Rivers, A. ; Parry, G. ; Roberts, J.S. ; Button, C.
Author_Institution
Univ. Coll. London, UK
Volume
25
Issue
15
fYear
1989
fDate
7/20/1989 12:00:00 AM
Firstpage
984
Lastpage
985
Abstract
Reports the demonstration of a high-contrast (>100:1), low-voltage multiple quantum well reflection modulator. The performance is achieved by using resonantly-enhanced electroabsorption in GaAs quantum wells embedded in the spacer region of an asymmetric Fabry-Perot cavity, which is at the same time a pin diode. Optimum contrast is observed at approximately=860 nm with only 9 V bias and approximately=3.5 dB insertion loss.
Keywords
III-V semiconductors; gallium arsenide; optical modulation; semiconductor quantum wells; GaAs; MQW; asymmetric Fabry-Perot cavity; bias; demonstration; high-contrast; insertion loss; low-voltage multiple quantum well reflection modulator; on:off ratio; performance; pin diode; ratio 100:1; resonantly-enhanced electroabsorption; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890658
Filename
31982
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