Low-voltage multiple quantum well reflection modulator with on:off ratio >100:1

Reports the demonstration of a high-contrast (>100:1), low-voltage multiple quantum well reflection modulator. The performance is achieved by using resonantly-enhanced electroabsorption in GaAs quantum wells embedded in the spacer region of an asymmetric Fabry-Perot cavity, which is at the same time a pin diode. Optimum contrast is observed at approximately=860 nm with only 9 V bias and approximately=3.5 dB insertion loss.