DocumentCode :
1171480
Title :
AlGaAs/GaInAs strained-base pnp heterojunction bipolar transistors
Author :
Lee, Woo Seung ; Ma, Tan ; Harris, James S.
Volume :
25
Issue :
15
fYear :
1989
fDate :
7/20/1989 12:00:00 AM
Firstpage :
993
Lastpage :
995
Abstract :
Reports the first strained-layer pnp heterojunction bipolar transistors fabricated in the AlGaAs/GaInAs/GaAs system. Despite significant lattice mismatch between the Ga0.9In0.1As base layer and AlGaAs emitter, the current gain was comparable to that of similar AlGaAs/GaAs transistors. A maximum gain of 35 was observed for a device with graded In content across the base.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; AlGaAs-GaInAs-GaAs; current gain; graded In content; heterojunction bipolar transistors; lattice mismatch; semiconductors; strained base pnp HBT; strained-base; strained-layer;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890664
Filename :
31988
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1171480
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