DocumentCode
1171485
Title
GaAs/AlGaAs multiple quantum well optical modulator using multilayer reflector stack grown on Si substrate
Author
Barnes, P. ; Zouganeli, P. ; Rivers, A. ; Whitehead, M. ; Parry, G. ; Woodbridge, K. ; Roberts, C.
Author_Institution
Univ. Coll. London, UK
Volume
25
Issue
15
fYear
1989
fDate
7/20/1989 12:00:00 AM
Firstpage
995
Lastpage
996
Abstract
Reports the first pin multiple quantum well reflection modulator grown on Si with a quarter-wave stack dielectric mirror. The structures demonstrated were grown by MBE, with a 75 period MQW, and achieved a relative change in reflectivity of 31% with 8 V applied bias at 865 nm. The absolute change in reflectivity was 17%.
Keywords
III-V semiconductors; electro-optical devices; gallium arsenide; molecular beam epitaxial growth; optical modulation; semiconductor quantum wells; silicon; substrates; 8 V; 865 nm; GaAs on Si; GaAs-AlGaAs; GaAs-Si; MBE; MQW; Si substrate; bias; change in reflectivity; multilayer reflector stack; multiple quantum well; optical modulator; p-i-n structure; pin multiple quantum well reflection modulator; quarter-wave stack dielectric mirror; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890665
Filename
31989
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