Title :
GaAs/AlGaAs multiple quantum well optical modulator using multilayer reflector stack grown on Si substrate
Author :
Barnes, P. ; Zouganeli, P. ; Rivers, A. ; Whitehead, M. ; Parry, G. ; Woodbridge, K. ; Roberts, C.
Author_Institution :
Univ. Coll. London, UK
fDate :
7/20/1989 12:00:00 AM
Abstract :
Reports the first pin multiple quantum well reflection modulator grown on Si with a quarter-wave stack dielectric mirror. The structures demonstrated were grown by MBE, with a 75 period MQW, and achieved a relative change in reflectivity of 31% with 8 V applied bias at 865 nm. The absolute change in reflectivity was 17%.
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; molecular beam epitaxial growth; optical modulation; semiconductor quantum wells; silicon; substrates; 8 V; 865 nm; GaAs on Si; GaAs-AlGaAs; GaAs-Si; MBE; MQW; Si substrate; bias; change in reflectivity; multilayer reflector stack; multiple quantum well; optical modulator; p-i-n structure; pin multiple quantum well reflection modulator; quarter-wave stack dielectric mirror; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890665
