Title :
GaInAs/InP I2L ring oscillators
Author :
Kurpas, Paul ; Woelk, E. ; Mayer, Ruben ; Beneking, H.
Author_Institution :
Aachen Tech. Univ., West Germany
fDate :
7/20/1989 12:00:00 AM
Abstract :
GaInAs/InP heterojunction bipolar transistors were fabricated and integrated to a seven-stage I2L ring oscillator. The transistors operating upside-down (inverted, collector on top) exhibit a current gain of 5. A delay time of 13 ns at a power consumption of 1.13 mW/gate has been achieved for 40*75 mu m2 devices.
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated injection logic; integrated logic circuits; oscillators; 1.13 mW; 13 ns; 40 to 75 micron; GaInAs-InP; I 2L; current gain; delay time; heterojunction bipolar transistors; inverted transistors; power consumption; ring oscillators; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890667
