• DocumentCode
    1171520
  • Title

    GaInAs/InP I2L ring oscillators

  • Author

    Kurpas, Paul ; Woelk, E. ; Mayer, Ruben ; Beneking, H.

  • Author_Institution
    Aachen Tech. Univ., West Germany
  • Volume
    25
  • Issue
    15
  • fYear
    1989
  • fDate
    7/20/1989 12:00:00 AM
  • Firstpage
    998
  • Lastpage
    999
  • Abstract
    GaInAs/InP heterojunction bipolar transistors were fabricated and integrated to a seven-stage I2L ring oscillator. The transistors operating upside-down (inverted, collector on top) exhibit a current gain of 5. A delay time of 13 ns at a power consumption of 1.13 mW/gate has been achieved for 40*75 mu m2 devices.
  • Keywords
    III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated injection logic; integrated logic circuits; oscillators; 1.13 mW; 13 ns; 40 to 75 micron; GaInAs-InP; I 2L; current gain; delay time; heterojunction bipolar transistors; inverted transistors; power consumption; ring oscillators; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890667
  • Filename
    31991
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1171520