Title :
Particle deposition and removal in wet cleaning processes for ULSI manufacturing
Author :
Itano, Mitsushi ; Kern, Fredrick W., Jr. ; Rosenberg, Reed W. ; Miyashita, Masayuki ; Kawanabe, Ichiro ; Ohmi, Tadahiro
Author_Institution :
Dept. of Electron., Tohoku Univ., Sendai, Japan
fDate :
5/1/1992 12:00:00 AM
Abstract :
Particle deposition on wafer surfaces in solutions can be described by the well-documented principles of colloid science. Particle concentration, solution pH, and ionic strength in solutions are all important factors which determine the number of particles which deposit on wafer surfaces immersed in liquids. maximum particle deposition is observed in high ionic strength acidic solutions and is reduced as solution pH increase. Particle removal efficiencies in various solutions were also investigated; NH4OH-H2O2-H 2O solutions were optimized in NH4OH content around the ratio of 0.05:1.15 (0.05 part NH4OH, 1 part H2O2, 5 parts H2O). Wafer damage as measured by surface micro-roughness was not increased during NH4 OH-H2O2-H2O treatment using this ratio
Keywords :
VLSI; integrated circuit manufacture; surface treatment; NH4OH-H2O2-H2O solutions; ULSI manufacturing; acidic solutions; ionic strength; particle concentration; particle deposition; particle removal; particulate contamination; solution pH; surface micro-roughness; surface treatment; wafer surfaces; wafers in solutions; wet cleaning processes; Chemistry; Cleaning; Fabrication; Hafnium; Liquids; Manufacturing processes; Silicon; Surface contamination; Surface treatment; Ultra large scale integration;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
