Title :
A monolithic ±5 1/2-digit BiMOS A/D converter
Author :
Rodgers, Bertram J. ; Thurber, Charles R.
Author_Institution :
Intersil Semicond., Cupertino, CA, USA
fDate :
6/1/1989 12:00:00 AM
Abstract :
A monolithic ±5-1/2-digit BiMOS analog-digital converter that achieves integral integrity within two counts over the range -2 V to +2 V and noise error for any single reading within ±1 count is described. The part uses four noncritical external passive components; the reference voltage is also provided externally. The converter uses a three-pass algorithm with a modified dual-slope integration and subsequent residue multiplication steps. It has been integrated on a BiMOS process based on a production 4-μm CMOS process with one mask added and the starting material polarity changed
Keywords :
BIMOS integrated circuits; analogue-digital conversion; -2 to 2 V; 4 micron; A/D converter; ADC; BiMOS; analog-digital converter; external reference voltage; modified dual-slope integration; noise error; residue multiplication steps; three-pass algorithm; Analog-digital conversion; CMOS process; Circuits; Instruments; MOSFETs; Production; Semiconductor device manufacture; Semiconductor device noise; Strain measurement; Transconductance;
Journal_Title :
Solid-State Circuits, IEEE Journal of
