A broad-band amplifier using GaAs/GaAlAs heterojunction bipolar transistors

Author

Topham, Peter J. ; Long, Adrian P. ; Saul, Peter H. ; Parton, J. Greg ; Hollis, Brian A. ; Hiams, Nicholas A. ; Fellow, Robert C Good

Author_Institution

Plessey Res. Caswell Ltd., Towcester, UK

Volume

24

Issue

3

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

686

Lastpage

689

Abstract

A compact wideband amplifier (or gain block) designed around a Darlington pair of GaAs/GaAlAs heterojunction bipolar transistors (HBTs) is discussed. This circuit has been fabricated by an ion-implanted process with a transistor f_t of 40 GHz. Two variants of the circuit gave either a 8.5-dB gain with a DC-to-5-GHz 3-dB bandwidth or a 13-dB gain with a DC-to-3-GHz bandwidth. These amplifiers gave 11.8- and 18.3-dBm output, respectively, at 1-dB gain compression

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; linear integrated circuits; microwave amplifiers; wideband amplifiers; 0 to 5 GHz; 13 dB; 3 GHz; 5 GHz; 8.5 dB; Darlington pair; GaAs-GaAlAs; HBTs; III-V semiconductors; MMIC; SHF; bipolar IC; broad-band amplifier; compact wideband amplifier; gain block; heterojunction bipolar transistors; microwave amplifier; Bandwidth; Bipolar transistors; Broadband amplifiers; Circuit testing; Digital integrated circuits; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Microwave circuits; Microwave devices;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.32026

Filename

32026