Title :
A 1920(H)×1035(V) pixel high-definition CCD image sensor
Author :
Oda, Eiji ; Nagano, Kenji ; Tanaka, Takanori ; Mutoh, Nobuhiko ; Orihara, Kozo
Author_Institution :
NEC Corp., Kanagawa, Japan
fDate :
6/1/1989 12:00:00 AM
Abstract :
A 1920(H)×1035(V)-pixel high-definition CCD (charge-coupled-device) image sensor compatible with an 1125-scanning-lines and 16:9 aspect-ratio television system is described. The device basically uses an interline scheme with a vertical overflow drain. To maintain 74.25-MHz ultrahigh-data-rate operation, the device adopts a dual-channel configuration for the horizontal CCD (H-CCD) register. To accomplish both vertical signal charge transfer in the vertical CCD (V-CCD) register and signal charge distribution from the V-CCD registers into the dual-channel horizontal CCD registers simultaneously within a 3.77-μs short horizontal blanking period, a one-horizontal-period signal storage memory electrode and optical black memory are introduced. Bipolar buffer transistor chips are hybridized in the same package as the device, so as to reduce parasitic capacitance at CCD output terminals and maintain a wide-bandwidth operation. The device operates successfully and 1000-TV-line limiting resolution was obtained for both vertical and horizontal directions. Total random noise was evaluated to be 41 electrons. Dynamic range reached 66 dB. Signal-to-noise ratio for a black/white (B/W) camera was 51.5 dB under F4.0 and 2000-lux illumination conditions
Keywords :
CCD image sensors; high definition television; television cameras; 1035 pixel; 1125-scanning-lines; 16:9 aspect-ratio; 1920 pixel; 1987200 pixel; 3.77 mus; 51.5 dB; 74.25 MHz; CCD image sensor; HDTV; SNR; TV camera; bipolar buffer transistor chips; charge-coupled-device; dual-channel configuration; dynamic range; high-definition; horizontal CCD register; horizontal blanking period; interline scheme; optical black memory; random noise; signal storage memory electrode; television system; ultrahigh-data-rate operation; vertical CCD register; vertical overflow drain; vertical signal charge transfer; wide-bandwidth operation; Blanking; Charge coupled devices; Charge transfer; Charge-coupled image sensors; HDTV; Image sensors; Optical buffering; Pixel; Registers; TV;
Journal_Title :
Solid-State Circuits, IEEE Journal of