Transient analysis of the CMOS-like a-Si:H TFT inverter circuit

Author

Chung, Kyo Y. ; Neudeck, Gerold W.

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

24

Issue

3

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

822

Lastpage

829

Abstract

The dynamic characteristics of a CMOS-like a-Si:H thin-film transistor (TFT) inverter circuit which utilizes the ambipolar property of the TFT are analyzed and modeled. The time-dependent characteristics of a-Si:H TFTs which originate from charge trapping and detrapping are characterized and modeled by shifts in the flat-band voltage. Based on a previously developed static model for the drain current, dynamic operation of the CMOS-like inverter into a load capacitance is described. To speed up the switching process, several device parameter optimizations are presented. Transient characteristics of the inverter are accurately analyzed and predicted by combining the time-dependent response of TFTs with the dynamic operation of the inverter. It is shown that some types of charge trapping can be beneficial for the CMOS-like inverter dynamic speed

Keywords

amorphous semiconductors; hydrogen; integrated logic circuits; invertors; silicon; thin film transistors; CMOS-like inverter; Si:H; TFT inverter circuit; ambipolar property; charge trapping; detrapping; device parameter optimizations; dynamic characteristics; flat-band voltage; load capacitance; static model; thin-film transistor; time-dependent characteristics; time-dependent response; Acceleration; Capacitance; Computer displays; Contacts; Inverters; Liquid crystal displays; Logic circuits; Thin film transistors; Transient analysis; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.32045

Filename

32045