Title :
Continuous monitoring of SF6 degradation in high voltage switchgear using Raman scattering
Author :
Irawan, R. ; Scelsi, G. ; Woolsey, G.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
In high voltage SF6 insulated switchgear, the level of SF6 concentration needs to be monitored regularly because of its degradation by switching arcs and on-going partial discharges or coronas. In the work reported here, measurements of SF6 dissociation rate following 75 μA positive and negative coronas have been made using a mass spectrometer and Raman spectroscopy. The two sets of data correlate well, the rates of degradation of SF6 and production of gaseous by-products being shown to be proportional to the charge transported by the corona. SF6 provides a particularly strong Raman signal at 773.5 cm-1, and the results demonstrate the feasibility of using Raman scattering to monitor SF6 degradation in high-voltage switchgear.
Keywords :
Raman spectra; Raman spectroscopy; SF6 insulation; arcs (electric); corona; dissociation; gas insulated switchgear; mass spectrometers; partial discharge measurement; Raman scattering; Raman spectroscopy; SF6; SF6 insulation degradation; continuous monitoring; corona; gaseous by-product; high voltage switchgear; mass spectrometer; partial discharge; sulphur hexafluoride dissociation measurement; switching arcs; Corona; Degradation; Insulation; Mass spectroscopy; Monitoring; Partial discharges; Production; Raman scattering; Switchgear; Voltage;
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
DOI :
10.1109/TDEI.2005.1511107