Title :
Two-dimensional imaging of cleaved Si p-n junctions with 30-nm resolution using a UHV scanning tunneling microscope
Author :
Kordic, S. ; van Loenen, E.J. ; Walker, Andrew J.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
The first two-dimensional scanning tunneling microscope (STM) measurements on cleaved shallow silicon p-n junctions are presented. The current imaging technique provides contrast between p- and n-type regions on biased junctions. The two-dimensional part of the junction is imaged and localized to within 30 nm. Both the cleaving of the junction and the STM measurements are performed in ultrahigh vacuum (UHV).<>
Keywords :
elemental semiconductors; p-n homojunctions; scanning tunnelling microscopy; silicon; 2D STM; 2D imaging; 30 nm; UHV scanning tunneling microscope; biased junctions; cleaved Si p-n junctions; current imaging technique; ultrahigh vacuum; Image resolution; Instruments; Microscopy; P-n junctions; Performance evaluation; Silicon; Surface topography; Tunneling; Vacuum systems; Voltage;
Journal_Title :
Electron Device Letters, IEEE
