Two-stage broadband high-gain W-band amplifier using 0.1-μm metamorphic HEMT technology

Author

Bok-Hyung Lee ; An, D. ; Mun-Kyo Lee ; Byeong-Ok Lim ; Kim, S.-D. ; Jin-Koo Rhee

Author_Institution

Millimeter-wave Innovation Technol. Res. Center, Seoul, South Korea

Volume

25

Issue

12

fYear

2004

Firstpage

766

Lastpage

768

Abstract

We report broadband high-gain W-band monolithic microwave integrated circuit amplifiers based on 0.1-μm InGaAs-InAlAs-GaAs metamorphic high electron mobility transistor (MHEMT) technology. The amplifiers show excellent S/sub 21/ gains greater than 10 dB in a very broad W-band frequency range of 75-100 GHz, thereby exhibiting a S/sub 21/ gain of 10.1 dB, a S/sub 11/ of -5.1 dB and a S/sub 22/ of -5.2 dB at 100 GHz, respectively. The high gain of the amplifier is mainly attributed to the performance of the MHEMTs exhibiting a maximum transconductance of 691 mS/mm, a current gain cutoff frequency of 189 GHz, and a maximum oscillation frequency of 334 GHz.

Keywords

III-V semiconductors; MMIC amplifiers; high electron mobility transistors; wideband amplifiers; 0.1 micron; 189 GHz; 334 GHz; 75 to 100 GHz; InGaAs-InAlAs-GaAs; MHEMT technology; W-band amplifier; broadband amplifier; current gain cutoff frequency; high electron mobility transistor; high-gain amplifier; metamorphic HEMT; microwave integrated circuit amplifiers; monolithic amplifiers; oscillation frequency; transconductance; two-stage amplifier; Broadband amplifiers; Cutoff frequency; HEMTs; Integrated circuit technology; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Performance gain; mHEMTs; 0.1-; Broadband amplifier; W-band;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.838506

Filename

1362768