The influence of n-type silicon piezoresistors pre-strain state on their piezoresistance

Author

Gridchin, V.A. ; Cherkaev, A.S. ; Sayanova, E.G.

Author_Institution

Novosibirsk state Tech. Univ., Novosibirsk, Russia

fYear

2014

fDate

2-4 Oct. 2014

Firstpage

55

Lastpage

58

Abstract

Theory of n-type silicon longitudinal and transverse piezoresistance coefficients in the case of uniaxial pre-strain state along [100] crystallographic axis is presented. Numerical calculations for various impurity concentrations in a range of 1·10¹⁶ - 1·10²⁰ cm^-3 are performed. It has been shown that compressive pre-strain state of the piezoresistor can increase the longitudinal piezoresistance coefficient on 60 %.

Keywords

crystallography; elemental semiconductors; impurities; numerical analysis; piezoresistive devices; resistors; silicon; Si; compressive pre-strain state; crystallographic axis; impurity concentrations; n-type silicon longitudinal piezoresistance coefficients; n-type silicon piezoresistor pre-strain state; transverse piezoresistance coefficients; uniaxial pre-strain state; Doping; Piezoresistance; Piezoresistive devices; Sensors; Silicon; Strain; Stress; piezoresistance; piezoresistor; strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Actual Problems of Electronics Instrument Engineering (APEIE), 2014 12th International Conference on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4799-6019-4

Type

conf

DOI

10.1109/APEIE.2014.7040925

Filename

7040925