Title :
The p-i-n junction-surface depletion-layer photodiode
Author_Institution :
Dept. of Phys., Wuhan Univ., Hubei, China
Abstract :
With the aim of seeking the optimal structure for photodetectors, the p-i-n junction-surface depletion-layer photodiodes have been investigated. The structure of the photodiodes is different from that of the conventional photosensors. Experiments for the devices show that the structure of the p-i-n junction-surface depletion layer is very advantageous to the photodetector in becoming a high responsivity and wide-spectrum device. This device can be used in UV, visible and near-infrared ranges.<>
Keywords :
p-i-n diodes; photodiodes; UV range; high responsivity; near-infrared ranges; optimal structure; p-i-n junction-surface depletion-layer photodiode; photodetectors; structure; visible range; wide-spectrum device; Absorption; Fingers; Helium; P-i-n diodes; PIN photodiodes; Photodetectors; Schottky barriers; Schottky diodes; Silicon; Voltage;
Journal_Title :
Electron Device Letters, IEEE
