800 V 4H-SiC RESURF-type lateral JFETs

Author

Fujikawa, K. ; Shibata, K. ; Masuda, T. ; Shikata, S. ; Hayashi, H.

Author_Institution

Device Technol. Center, Sumitomo Electr. Ind. Ltd., Osaka, Japan

Volume

25

Issue

12

fYear

2004

Firstpage

790

Lastpage

791

Abstract

This letter proposes to show that a lateral switching device has some unique advantages, including little dependence on substrate defects, low on-resistance, and a simple design of heat radiation. A reduced surface field (RESURF) type SiC-JFET is one of candidate devices for an electric or hybrid automobile application. Small RESURF-type SiC-JFETs with gate width of 200 μm and a blocking voltage of 800 V were fabricated. The fabrication and characteristics of the devices are described and discussed.

Keywords

automobiles; automotive electronics; heat radiation; junction gate field effect transistors; substrates; wide band gap semiconductors; 200 micron; 800 V; RESURF-type JFET; SiC; blocking voltage; electric automobile application; heat radiation; hybrid automobile application; junction gate field effect transistors; lateral JFET; lateral switching device; reduced surface field; substrate defects; Annealing; Argon; Automobiles; Fabrication; Ion implantation; JFETs; Silicon carbide; Silicon compounds; Substrates; Voltage; JFETs; reduced surface field (RESURF); silicon carbide (SiC);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.838058

Filename

1362776