Title :
Novel FRESURF LDMOSFET devices with improved BVdss-Rdson
Author :
Khemka, Vishnu ; Parthasarathy, Vijay ; Zhu, Ronghua ; Bose, Amitava
Author_Institution :
SMARTMOS Technol. Center, Freescale Semicond. Inc., Tempe, AZ, USA
Abstract :
In this letter, we propose and demonstrate a novel device based on a floating reduced surface field (FRESURF) concept which allows the realization of significantly higher breakdown voltage in a thin epitaxy-based power IC technology. The newly proposed device with the floating buried layer pulled back from the source side is able to realize an enhanced breakdown voltage (BVdss) without degrading the specific on-resistance (RdsonA). BVdss-RdsonA values like 47 V-0.28 mΩ·cm2 or 93 V-0.82 mΩ·cm2 have been realized with a conventional power IC technology without any added process complexity.
Keywords :
MOSFET; power integrated circuits; voltage control; 47 V; 93 V; BVdss-Rdson; FRESURF device; LDMOSFET device; breakdown voltage; floating buried layer; floating reduced surface field; smart power; specific on-resistance; thin epitaxy-based power IC technology; Breakdown voltage; Decision support systems; Degradation; Electric potential; Epitaxial growth; FETs; Manufacturing industries; Physics; Power integrated circuits; Substrates; 65; Breakdown voltage; FRESURF; LDMOS; LDMOSFET; RESURF; floating reduced surface field; high-side; punchthrough; reduced surface field; smart power; specific on-resistance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.838313
