Title :
Body effect in tri- and pi-gate SOI MOSFETs
Author :
Frei, James ; Johns, Chad ; Vazquez, Akaena ; Xiong, Weize ; Cleavelin, C. Rinn ; Schulz, Thomas ; Chaudhary, Nirmal ; Gebara, Gabriel ; Zaman, Jyoti R. ; Gostkowski, Michael ; Matthews, Kenneth ; Colinge, Jean-Pierre
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Davis, CA, USA
Abstract :
A simple model based on the representation of capacitive coupling effects between the front- and back-gate and the channels, has been developed for tri-gate and pi-gate SOI MOSFETs. The model has been validated using numerical simulation of the body factor in such devices, as well as by experimental results. The body factor is much smaller than in regular, single-gate silicon-on-insulator devices because of the enhanced coupling between gate and channel and because the lateral gates shield the device from the electrostatic field from the back gate.
Keywords :
MOSFET; coupled circuits; silicon-on-insulator; MOS devices; SOI MOSFETs; back-gate; body effect; body factor; capacitive coupling; channel coupling; electrostatic field; front-gate; gate coupling; insulated gate FETs; lateral gates; numerical simulation; pi-gate; single-gate silicon-on-insulator devices; tri-gate; Capacitance; Capacitors; Electrostatics; Equivalent circuits; FETs; MOS devices; MOSFETs; Numerical simulation; Silicon on insulator technology; Threshold voltage; 65; Insulated gate FETs; MOS devices; SOI; silicon-on-insulator; technology;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.839223
