Body effect in tri- and pi-gate SOI MOSFETs

Author

Frei, James ; Johns, Chad ; Vazquez, Akaena ; Xiong, Weize ; Cleavelin, C. Rinn ; Schulz, Thomas ; Chaudhary, Nirmal ; Gebara, Gabriel ; Zaman, Jyoti R. ; Gostkowski, Michael ; Matthews, Kenneth ; Colinge, Jean-Pierre

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Davis, CA, USA

Volume

25

Issue

12

fYear

2004

Firstpage

813

Lastpage

815

Abstract

A simple model based on the representation of capacitive coupling effects between the front- and back-gate and the channels, has been developed for tri-gate and pi-gate SOI MOSFETs. The model has been validated using numerical simulation of the body factor in such devices, as well as by experimental results. The body factor is much smaller than in regular, single-gate silicon-on-insulator devices because of the enhanced coupling between gate and channel and because the lateral gates shield the device from the electrostatic field from the back gate.

Keywords

MOSFET; coupled circuits; silicon-on-insulator; MOS devices; SOI MOSFETs; back-gate; body effect; body factor; capacitive coupling; channel coupling; electrostatic field; front-gate; gate coupling; insulated gate FETs; lateral gates; numerical simulation; pi-gate; single-gate silicon-on-insulator devices; tri-gate; Capacitance; Capacitors; Electrostatics; Equivalent circuits; FETs; MOS devices; MOSFETs; Numerical simulation; Silicon on insulator technology; Threshold voltage; 65; Insulated gate FETs; MOS devices; SOI; silicon-on-insulator; technology;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.839223

Filename

1362784