DocumentCode
1172300
Title
Carbon nanotube applications in microelectronics
Author
Hoenlein, Wolfgang ; Kreupl, Franz ; Duesberg, Georg Stefan ; Graham, Andrew Peter ; Liebau, Maik ; Seidel, Robert Viktor ; Unger, Eugen
Author_Institution
Corp. Res. Dept., Munich, Germany
Volume
27
Issue
4
fYear
2004
Firstpage
629
Lastpage
634
Abstract
The extraordinary characteristics of carbon nanotubes make them a promising candidate for applications in microelectronics. Catalyst-mediated chemical vapor deposition growth is very well suited for selective in-situ growth of nanotubes compatible with the requirements of microelectronics technology. This deposition method can be exploited for carbon nanotube vias. Semiconducting single-walled tubes can be successfully operated as carbon nanotube field effect transistors (CNTFET). A simulation of an ideal CNTFET is presented and compared with the requirements of the ITRS roadmap. Finally, we compare an upgraded CNTFET with the most advanced silicon metal oxide semiconductor field effect transistors and discuss integration issues.
Keywords
carbon nanotubes; chemical vapour deposition; field effect transistors; integrated circuits; C; ITRS; carbon nanotube field effect transistors; chemical vapor deposition; in-situ growth; microelectronics; silicon metal oxide semiconductor field effect transistors; single-walled tubes semiconduction; Atomic layer deposition; Carbon nanotubes; Chemical vapor deposition; Electron tubes; FETs; Microelectronics; Scattering; Semiconductivity; Semiconductor nanotubes; Thermal conductivity; 65; CNTFETs; CVD; Carbon nanotube field effect transistors; MOSFETs; chemical vapor deposition; metal oxide semiconductor field effect transistors;
fLanguage
English
Journal_Title
Components and Packaging Technologies, IEEE Transactions on
Publisher
ieee
ISSN
1521-3331
Type
jour
DOI
10.1109/TCAPT.2004.838876
Filename
1362795
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