Title :
Carbon nanotube applications in microelectronics
Author :
Hoenlein, Wolfgang ; Kreupl, Franz ; Duesberg, Georg Stefan ; Graham, Andrew Peter ; Liebau, Maik ; Seidel, Robert Viktor ; Unger, Eugen
Author_Institution :
Corp. Res. Dept., Munich, Germany
Abstract :
The extraordinary characteristics of carbon nanotubes make them a promising candidate for applications in microelectronics. Catalyst-mediated chemical vapor deposition growth is very well suited for selective in-situ growth of nanotubes compatible with the requirements of microelectronics technology. This deposition method can be exploited for carbon nanotube vias. Semiconducting single-walled tubes can be successfully operated as carbon nanotube field effect transistors (CNTFET). A simulation of an ideal CNTFET is presented and compared with the requirements of the ITRS roadmap. Finally, we compare an upgraded CNTFET with the most advanced silicon metal oxide semiconductor field effect transistors and discuss integration issues.
Keywords :
carbon nanotubes; chemical vapour deposition; field effect transistors; integrated circuits; C; ITRS; carbon nanotube field effect transistors; chemical vapor deposition; in-situ growth; microelectronics; silicon metal oxide semiconductor field effect transistors; single-walled tubes semiconduction; Atomic layer deposition; Carbon nanotubes; Chemical vapor deposition; Electron tubes; FETs; Microelectronics; Scattering; Semiconductivity; Semiconductor nanotubes; Thermal conductivity; 65; CNTFETs; CVD; Carbon nanotube field effect transistors; MOSFETs; chemical vapor deposition; metal oxide semiconductor field effect transistors;
Journal_Title :
Components and Packaging Technologies, IEEE Transactions on
DOI :
10.1109/TCAPT.2004.838876
