Title :
Modeling process latitude in UV projection lithography
Author :
Barouch, Eytan ; Hollerbach, Uwe ; Orszag, Steven A. ; Bradie, Brian ; Peckerar, Martin
Author_Institution :
Appl. & Comput. Math., Princeton Univ., NJ, USA
Abstract :
The degree to which critical performance parameters are stable against small variations in process parameters is called process latitude. Advanced computer models of UV microlithography are used to study the impact of the notching phenomenon (exposure enhancement near steps in the exposure plane) on process latitude. It is shown that notching effects give rise to a rapid degradation of resist development process latitude.<>
Keywords :
photolithography; UV microlithography; UV projection lithography; computer models; exposure enhancement near steps; notching effects; notching phenomenon; process latitude modelling; resist development process latitude; Degradation; Diffraction; Lithography; Manufacturing processes; Mathematics; Maxwell equations; Optical reflection; Physics computing; Resists; Semiconductor devices;
Journal_Title :
Electron Device Letters, IEEE
