• DocumentCode
    1172536
  • Title

    Experimental analysis of millimeter wave coplanar waveguide slow wave structures on GaAs

  • Author

    Spickermann, Ralph ; Dagli, Nadir

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    42
  • Issue
    10
  • fYear
    1994
  • fDate
    10/1/1994 12:00:00 AM
  • Firstpage
    1918
  • Lastpage
    1924
  • Abstract
    Microwave coplanar waveguide slow wave structures suitable for use in traveling wave electrooptic modulators were experimentally investigated to 40 GHz. Velocity slowing is achieved by introducing periodic slots in the ground planes. Structures both on semiinsulating GaAs substrates and on epitaxial layers grown by molecular beam epitaxy on semiinsulating GaAs substrates were examined. In the measurements the thru-reflect-line calibration method was used and its limitations are discussed. The characteristic impedance, phase velocity and loss coefficient of these lines were extracted from measured S-parameters. Effects of various dimensions on these line properties are presented and discussed. Results indicate that significant phase velocity slowing without dispersion at least up to 40 GHz is possible with this approach. This is true both on semi-insulating GaAs substrates and specially designed epitaxial layers. A design approach to achieve a specified phase velocity and characteristic impedance is given
  • Keywords
    III-V semiconductors; MMIC; S-parameters; electro-optical devices; gallium arsenide; molecular beam epitaxial growth; waveguides; 40 GHz; GaAs; S-parameters; characteristic impedance; ground planes; loss coefficient; millimeter wave coplanar waveguide; molecular beam epitaxy; periodic slots; phase velocity; slow wave structures; thru-reflect-line calibration method; traveling wave electrooptic modulators; velocity slowing; Calibration; Coplanar waveguides; Electrooptic modulators; Electrooptical waveguides; Epitaxial layers; Gallium arsenide; Impedance; Millimeter wave technology; Molecular beam epitaxial growth; Substrates;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.320774
  • Filename
    320774