Title :
Transient behavior of subthreshold characteristics of fully depleted SOI MOSFETs
Author :
Assaderaghi, Fariborz ; Chen, Jian ; Solomon, Ray ; Chian, T.-Y. ; Ko, Ping Keung ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested.<>
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; thickness measurement; Si film thickness measurement; anomaly; applications; back-gate voltage conditions; front gate voltage conditions; fully depleted SOI MOSFETs; model; subthreshold characteristics; subthreshold currents; transient behavior; CMOS technology; MOSFETs; Particle measurements; Semiconductor films; Silicon on insulator technology; Steady-state; Subthreshold current; Thickness measurement; Threshold voltage; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
