A polar modulator transmitter for GSM/EDGE

Author

Elliott, Michael R. ; Montalvo, Tony ; Jeffries, Brad P. ; Murden, Frank ; Strange, Jon ; Hill, Allen ; Nandipaku, Sanjay ; Harrebek, Johannes

Author_Institution

Analog Devices Inc., Greensboro, NC, USA

Volume

39

Issue

12

fYear

2004

Firstpage

2190

Lastpage

2199

Abstract

This 0.5-μm SiGe BiCMOS polar modulator IC adds EDGE transmit capability to a GSM transceiver IC without any RF filters. Envelope information is extracted from the transmit IF and applied to the phase-modulated carrier in an RF variable gain amplifier which follows the integrated transmit VCO. The dual-band IC supports all four GSM bands. In EDGE mode, the IC produces more than 1 dBm of output power with more than 6 dB of margin to the transmit spectrum mask and less than 3% rms phase error. In GSM mode, more than 7 dBm of output power is produced with noise in the receive band less than -164 dBc/Hz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; cellular radio; integrated circuit design; phase modulation; radio transmitters; radiofrequency amplifiers; radiofrequency integrated circuits; transceivers; voltage-controlled oscillators; 0.5 micron; BiCMOS integrated circuit; EDGE; GSM band; GSM transceiver; RE filters; RF variable gain amplifier; SiGe; dual-band IC; envelope information extraction; integrated transmit VCO; phase-modulated carrier; polar modulator transmitter; transmit IF; transmit spectrum mask; voltage controlled oscillator; BiCMOS integrated circuits; Filters; GSM; Germanium silicon alloys; Power generation; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Transceivers; Transmitters;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2004.836340

Filename

1362828