Title :
A 3-10-GHz low-noise amplifier with wideband LC-ladder matching network
Author :
Ismail, Aly ; Abidi, Asad A.
Author_Institution :
Skyworks Solutions Inc., Irvine, CA, USA
Abstract :
Reactive matching is extended to wide bandwidths using the impedance property of LC-ladder filters. In this paper, we present a systematic method to design wideband low-noise amplifiers. An SiGe amplifier with on-chip matching network spanning 3-10 GHz delivers 21-dB peak gain, 2.5-dB noise figure, and -1-dBm input IP3 at 5 GHz, with a 10-mA bias current.
Keywords :
Ge-Si alloys; integrated circuit design; ladder networks; low-power electronics; matched filters; semiconductor device noise; ultra wideband communication; wideband amplifiers; 10 mA; 2.5 dB; 21 dB; 3 to 10 GHz; IP3; LC-ladder filters; SiGe; SiGe amplifier; amplifier noise; impedance property; integrated circuit design; low-noise amplifier; noise figure; on-chip matching; reactive matching; wideband LC-ladder matching network; Bandwidth; Broadband amplifiers; Design methodology; Germanium silicon alloys; Impedance; Low-noise amplifiers; Matched filters; Network-on-a-chip; Noise figure; Silicon germanium; 65; Amplifier noise; LNA; NF; SiGe amplifier; UWB; low-noise amplifier; noise figure; ultrawideband; wideband matching;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.836344
