• DocumentCode
    1172746
  • Title

    ΣHigh-frequency LC VCO design using capacitive degeneration

  • Author

    Jung, Byunghoo ; Harjani, Ramesh

  • Author_Institution
    Univ. of Minnesota, Minneapolis, MN, USA
  • Volume
    39
  • Issue
    12
  • fYear
    2004
  • Firstpage
    2359
  • Lastpage
    2370
  • Abstract
    In this paper, we evaluate the high-frequency performance limitations of traditional LC voltage-controlled oscillators (VCOs) that use a cross-coupled negative resistance cell and propose a new topology that overcomes these limitations. The proposed cell is based on a capacitively emitter degenerated topology which uses a cross-coupled MOS pair as the degeneration cell. The cross-coupled MOS pair contributes additional conductance and results in a higher maximum attainable oscillation frequency and better negative resistance characteristics as compared to the other topologies at high frequencies. These properties combined with its small effective capacitance enable low-power low-noise high-frequency VCO implementations. The proposed topology is demonstrated through a 20-GHz fully integrated LC VCO implemented in the IBM SiGe 0.25-μm BiCMOS process. A comparison of its figure of merit with previously reported 20-GHz VCOs shows the effectiveness of the proposed topology.
  • Keywords
    BiCMOS analogue integrated circuits; MOS integrated circuits; negative resistance; voltage-controlled oscillators; 0.25 micron; 20 GHz; BiCMOS integrated circuits; SiGe; analog integrated circuits; capacitive degeneration; cross-coupled MOS pair; high-frequency LC VCO design; high-frequency LC oscillators; negative resistance cell; oscillation frequency; voltage-controlled oscillators; Bandwidth; BiCMOS integrated circuits; Capacitance; Circuit topology; Frequency; Germanium silicon alloys; Performance analysis; Semiconductor device noise; Silicon germanium; Voltage-controlled oscillators; 65; Analog integrated circuits; BiCMOS integrated circuits; VCOs; capacitive degeneration; high-frequency; negative resistance cell; voltage-controlled oscillators;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2004.835643
  • Filename
    1362844