DocumentCode :
1172778
Title :
Gate breakdown in MESFETs and HEMTs
Author :
Trew, Robert J. ; Mishra, Umesh K.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Volume :
12
Issue :
10
fYear :
1991
Firstpage :
524
Lastpage :
526
Abstract :
A new model for gate breakdown in MESFETs and HEMTs is presented. The model is based upon a combination of thermally assisted tunneling and avalanche breakdown. When thermal effects are considered it is demonstrated that the model predicts increasing drain-source breakdown as the gate electrode is biased towards pinch-off, in agreement with experimental data. The model also predicts the gate current versus bias behavior observed in experimental data. The model is consistent with various reports of breakdown and light emission phenomena reported in the literature.<>
Keywords :
Schottky gate field effect transistors; high electron mobility transistors; impact ionisation; semiconductor device models; tunnelling; HEMTs; MESFETs; avalanche breakdown; breakdown phenomena; drain-source breakdown; gate breakdown; gate current versus bias; light emission phenomena; thermal effects; thermally assisted tunneling; Avalanche breakdown; Breakdown voltage; Electric breakdown; Electrodes; HEMTs; MESFETs; MODFETs; Predictive models; Temperature; Tunneling;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.119177
Filename :
119177
Link To Document :
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