DocumentCode :
1172809
Title :
A 3.9-μm pixel pitch VGA format 10-b digital output CMOS image sensor with 1.5 transistor/pixel
Author :
Takahashi, Hidekazu ; Kinoshita, Masakuni ; Morita, Kazumichi ; Shirai, Takahiro ; Sato, Toshiaki ; Kimura, Takayuki ; Yuzurihara, Hiroshi ; Inoue, Shunsuke ; Matsumoto, Shigeyuki
Author_Institution :
Semicond. Device Dev. Center, Canon Inc., Kanagawa, Japan
Volume :
39
Issue :
12
fYear :
2004
Firstpage :
2417
Lastpage :
2425
Abstract :
A 3.9-μm pixel pitch VGA format 10-b digital output CMOS image sensor with 1.5 transistor/pixel has been developed for mobile applications. The newly developed CMOS pixel architecture realizes the minimum number of the transistors in one pixel. Small pixel size and sufficient fill factor are achieved by using the shared pixel architecture and floating diffusion driving. High conversion gain, low random noise, and low dark current are achieved by buried photodiode with complete charge transfer capability and correlated double sampling (CDS) circuit. The image sensor is fabricated in a thin planarized 0.35-μm single poly-Si double-metal customized CMOS process in order to provide good image performance. The image sensor achieves low noise floor of 330 μV and low dark current of 50 pA/cm2 at 45°C. This image sensor also realized various functions by on-chip digital and analog circuits.
Keywords :
CMOS image sensors; analogue circuits; digital circuits; integrated circuit design; mobile communication; optical modulation; photodiodes; transistors; 0.25 microns; 1.5 transistor/pixel; 3.9 microns; 330 muV; 45 C; CMOS image sensor; CMOS pixel architecture; Si; VGA format; buried photodiode; charge transfer capability; correlated double sampling; floating diffusion driving; mobile applications; modulation floating diffusion; on-chip analog circuits; on-chip digital circuits; poly-Si double-metal CMOS; sharing floating diffusion amplifier; CMOS image sensors; CMOS process; Charge transfer; Circuit noise; Dark current; Image converters; Image sampling; Image sensors; Photodiodes; Pixel; 65; CMOS image sensors; modulation floating diffusion; sharing floating diffusion amplifier; small pixels;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2004.837087
Filename :
1362851
Link To Document :
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