1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As)

Author

Warren, Alan C. ; Burroughes, J.H. ; Woodall, Jerry M. ; McInturff, D.T. ; Hodgson, Rodney T. ; Melloch, Michael R.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

12

Issue

10

fYear

1991

Firstpage

527

Lastpage

529

Abstract

The fabrication of a GaAs detector which operates in the 1.3- to 1.5- mu m optical range is reported. The detector is a P-i-N photodiode with an intrinsic layer composed of undoped GaAs which was grown at 225 degrees C and subsequently annealed at 600 degrees C. This growth process has been demonstrated to produce a high density of As precipitates in the low-temperature grown region, which the authors show to exhibit absorption through internal photoemission. The internal Schottky barrier height of the As precipitates is found to be 0.7 eV, leading to reasonable room-temperature responsivity out to around 1.7 mu m.<>

Keywords

III-V semiconductors; gallium arsenide; optical communication equipment; photodiodes; receivers; 0.7 eV; 1.3 to 1.7 micron; 225 C; 600 C; As precipitates; GaAs; P-i-N photodiode; absorption through internal photoemission; internal Schottky barrier height; low-temperature grown region; room-temperature responsivity; semiconductors; undoped GaAs; Annealing; Detectors; Gallium arsenide; Optical device fabrication; Optical receivers; Optical sensors; PIN photodiodes; Photoconducting materials; Photodetectors; Photoelectricity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119178

Filename

119178