• DocumentCode
    1173030
  • Title

    Subthreshold characteristics of insulated-gate field-effect transistors

  • Author

    Troutman, Ronald R. ; Chakravarti, Satya N.

  • Volume
    20
  • Issue
    6
  • fYear
    1973
  • fDate
    11/1/1973 12:00:00 AM
  • Firstpage
    659
  • Lastpage
    665
  • Abstract
    A simple analytical model is developed for the subthreshold region of insulated-gate field-effect transistors (IGFET). For short channels, it is necessary to extend the model to include two-dimensional band-bending effects at the source in order to describe correctly the reduction in threshold caused by high drain and substrate voltages. The model is experimentally verified over a wide range of bias conditions and channel lengths and is compared with one- and two-dimensional numerical models.
  • Keywords
    IGFETs; Transistor models; Analytical models; Charge carrier density; Circuits; Current-voltage characteristics; FETs; Impurities; Insulation; Numerical models; Semiconductor device modeling; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Circuit Theory, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9324
  • Type

    jour

  • DOI
    10.1109/TCT.1973.1083759
  • Filename
    1083759
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1173030