Fluctuation Analysis of Parasitic Resistance in FinFETs With Scaled Fin Thickness

Author

Matsukawa, Takashi ; Endo, Kazuhiko ; Ishikawa, Yuki ; Yamauchi, Hiromi ; O´uchi, Shinichi ; Liu, Yongxun ; Tsukada, Junichi ; Ishii, Kenichi ; Sakamoto, Kunihiro ; Suzuki, Eiichi ; Masahara, Meishoku

Author_Institution

Nanoelectron. Res. Inst., AIST, Ibaraki

Volume

30

Issue

4

fYear

2009

fDate

4/1/2009 12:00:00 AM

Firstpage

407

Lastpage

409

Abstract

Measurement-based analysis of the parasitic resistance (R _para) of FinFETs was extended to investigation of R _para fluctuation, which could cause severe on-current variation. R _para was obtained from the intercept in the linear relationship between measured on-resistance and gate length for FinFETs of various dimensions. A significant increase in R _para is observed for fin thickness below 25 nm due to dopant loss from the ultrathin extension during processing. R _para variation was evaluated for 45 FinFETs with an average fin thickness of 16 nm. Significant R _para variation is observed and correlates with the variation of fin thickness.

Keywords

MOSFET; current fluctuations; electric resistance; FinFET; fluctuation analysis; gate length; measurement-based analysis; parasitic resistance; scaled fin thickness; Doping; FinFET; extension; fluctuation; parasitic resistance; source-drain (S/D);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2014180

Filename

4787035