Title :
Fluctuation Analysis of Parasitic Resistance in FinFETs With Scaled Fin Thickness
Author :
Matsukawa, Takashi ; Endo, Kazuhiko ; Ishikawa, Yuki ; Yamauchi, Hiromi ; O´uchi, Shinichi ; Liu, Yongxun ; Tsukada, Junichi ; Ishii, Kenichi ; Sakamoto, Kunihiro ; Suzuki, Eiichi ; Masahara, Meishoku
Author_Institution :
Nanoelectron. Res. Inst., AIST, Ibaraki
fDate :
4/1/2009 12:00:00 AM
Abstract :
Measurement-based analysis of the parasitic resistance (R para) of FinFETs was extended to investigation of R para fluctuation, which could cause severe on-current variation. R para was obtained from the intercept in the linear relationship between measured on-resistance and gate length for FinFETs of various dimensions. A significant increase in R para is observed for fin thickness below 25 nm due to dopant loss from the ultrathin extension during processing. R para variation was evaluated for 45 FinFETs with an average fin thickness of 16 nm. Significant R para variation is observed and correlates with the variation of fin thickness.
Keywords :
MOSFET; current fluctuations; electric resistance; FinFET; fluctuation analysis; gate length; measurement-based analysis; parasitic resistance; scaled fin thickness; Doping; FinFET; extension; fluctuation; parasitic resistance; source-drain (S/D);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2014180
