The effect of biased spacers on LDD MOSFET behavior

The concept of using LDD spacers that are independently biased with respect to the gate electrode is presented. It is shown that the lateral electric field is strongly influenced by the drain polysilicon spacer potential. Depending on the N/sup -/ dose, the peak substrate currents can be either enhanced or reduced by shorting the drain polysilicon spacer to the drain potential. Short-channel LDD MOSFETs have been fabricated with polysilicon LDD spacers shorted to the source and drain electrodes by titanium silicide.<>