Demonstration of enhanced performance of an InP/InGaAs heterojunction phototransistor with a base terminal

Author

Chandrasekhar, S. ; Hoppe, M.K. ; Dentai, Andrew G. ; Joyner, C.H. ; Qua, G.J.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

12

Issue

10

fYear

1991

Firstpage

550

Lastpage

552

Abstract

The optical gain and the small-signal frequency response of an InP/InGaAs heterojunction phototransistor (HPT) with a base terminal are investigated in detail for the first time. When operated under an optimally chosen external base current, the optical gain is enhanced more than five times over that of the same device operated as a two-terminal device, over a 17-dB range of input optical power. The small-signal 3-dB bandwidth of the three-terminal device is enhanced 15 times over that of the two-terminal device over the same range of input optical power. For a pseudorandom NRZ bit stream at 100 Mb/s, a clear eye opening is observed at an incident optical power of -33 dBm (500 nW).<>

Keywords

III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; optical communication equipment; phototransistors; 100 Mbit/s; 500 nW; InP-InGaAs; bandwidth; base terminal; external base current; eye diagram; eye opening; heterojunction phototransistor; incident optical power; input optical power; optical gain; pseudorandom NRZ bit stream; semiconductors; small-signal frequency response; three terminal phototransistors; three-terminal device; Bandwidth; Heterojunctions; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical devices; Optical sensors; Photodetectors; Phototransistors; Tellurium;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119185

Filename

119185