Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gates

Author

Neudeck, P.G. ; Carpenter, M.S. ; Melloch, Michael R. ; Cooper, James A., Jr.

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

12

Issue

10

fYear

1991

Firstpage

553

Lastpage

555

Abstract

Ammonium-sulfide ((NH/sub 4/)/sub 2/S) treated gates have been employed in the fabrication of GaAs MESFETs that exhibit a remarkable reduction in subthreshold leakage current. A greater than 100-fold reduction in drain current minimum is observed due to a decrease in Schottky gate leakage. The electrical characteristics have remained stable for over a year during undesiccated storage at room temperature, despite the absence of passivation layers.<>

Keywords

III-V semiconductors; Schottky effect; Schottky gate field effect transistors; gallium arsenide; leakage currents; (NH/sub 4/)/sub 2/S surface treated gates; 1 year; 300 K; GaAs; decrease in Schottky gate leakage; electrical characteristics; long term stability; n-channel MESFET; reduction in subthreshold leakage current; semiconductors; undesiccated storage at room temperature; Fabrication; Gallium arsenide; Gate leakage; Intrusion detection; Large scale integration; Leakage current; MESFETs; Schottky barriers; Schottky diodes; Subthreshold current;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119186

Filename

119186