Title :
High-breakdown, high-gain InAlAs/InGaAsP quantum-well HEMTs
Author :
Hong, Won-P ; Bhat, Rajaram ; Hayes, John R. ; Nguyen, Chi ; Koza, Mark ; Chang, Gee-Kung
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
An investigation was conducted of the DC and RF characteristics of InAlAs/InGaAsP quantum-well channel HEMTs. An extrinsic transconductance as high as 210 mS/mm was obtained for a gate length of 1.0 mu m. The HEMTs showed excellent drain-source and gate-drain breakdown characteristics and a very small output conductance of less than 2 mS/mm, resulting in a very high DC voltage gain of greater than 100. The maximum available gain (MAG) was measured to be as high as 14.5 dB at 20 GHz, which corresponds to an extrapolated f/sub max/ of 105 GHz.<>
Keywords :
aluminium compounds; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; solid-state microwave devices; 1 micron; 105 GHz; 14.5 dB; 20 GHz; DC characteristics; DC voltage gain; InAlAs-InGaAsP; MAG; RF characteristics; drain source breakdown characteristics; extrinsic transconductance; gate length; gate-drain breakdown characteristics; high breakdown voltage; high gain HEMTs; maximum available gain; quantum-well channel HEMTs; small output conductance; Breakdown voltage; Electric breakdown; HEMTs; Indium compounds; Indium phosphide; MODFETs; Quantum wells; Radio frequency; Semiconductor materials; Thermal conductivity;
Journal_Title :
Electron Device Letters, IEEE
