Title :
A single-piece C/sub infinity /-continuous MOSFET model including subthreshold conduction
Author :
McAndrew, Colin C. ; Bhattacharyya, Bijan K. ; Wing, Omar
Author_Institution :
AT&T Bell Lab., Allentown, PA, USA
Abstract :
A simple yet powerful technique that transforms regional compact (algebraic) MOSFET models into single-piece C/sub infinity /-continuous models is introduced. The technique significantly improves MOSFET models by removing kinks and glitches at the boundaries between the subthreshold, triode, and saturation regions of operation. In addition, the technique adds subthreshold conduction modeling to models that lack such a capability. The authors show the technique by extending a simple MOSFET model, which is three piece and does not model subthreshold conduction, to become a single-piece model that includes subthreshold conduction.<>
Keywords :
insulated gate field effect transistors; semiconductor device models; C/sub infinity /-continuous MOSFET model; MOSFET model extension; MOSFET models; all regions of operation model; single-piece model; subthreshold conduction; Circuit simulation; Convergence of numerical methods; FETs; H infinity control; MOSFET circuits; Parameter extraction; Power MOSFET; Subthreshold current; Transient analysis; Voltage;
Journal_Title :
Electron Device Letters, IEEE
