Title :
PMOS transistors in LPCVD polycrystalline silicon-germanium films
Author :
King, Tsu-Jae ; Saraswat, Krishna C. ; Pfiester, James R.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
P-channel MOS thin-film transistors (TFTs) have been fabricated in low-pressure chemical vapor deposition (LPCVD) polycrystalline silicon-germanium (poly-SiGe) films using either a low-temperature (>
Keywords :
CVD coatings; Ge-Si alloys; hydrogen; insulated gate field effect transistors; thin film transistors; 600 C; 950 C; LPCVD; MOS thin-film transistors; PMOS transistors; active channel region; anneal temperatures; anneal times; electrically active traps reduction; high temperature process; hydrogenation; low temperature process; low-pressure chemical vapor deposition; poly-SiGe; polycrystalline SiGe:H; transistor characteristics; Annealing; Chemical vapor deposition; Electrodes; Germanium silicon alloys; Implants; MOSFETs; Semiconductor films; Silicon germanium; Temperature; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
