DocumentCode
1173567
Title
Novel N/sub 2/O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide films
Author
Fukuda, H. ; Yasuda, M. ; Iwabuchi, T. ; Ohno, S.
Author_Institution
Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Volume
12
Issue
11
fYear
1991
Firstpage
587
Lastpage
589
Abstract
Ultrathin ( approximately=6 nm) oxynitrided SiO/sub 2/ (SiO/sub x/N/sub y/) films have been formed on Si
Keywords
CMOS integrated circuits; EPROM; VLSI; integrated circuit technology; integrated memory circuits; nitridation; nitrogen compounds; oxidation; silicon compounds; 6 nm; CMOS; EEPROM tunnel oxide films; N/sub 2/O ambient; N/sub 2/O oxynitridation; RTP; Si; Si-N bonds; Si-SiO/sub x/N/sub y/; SiO/sub x/N/sub y/ film; electron trap sites reduction; oxynitridation; oxynitrided films; rapid thermal processing; reliable films; ultrathin films; Atomic measurements; Dielectric films; Dielectric thin films; EPROM; Electron traps; Nonvolatile memory; Rapid thermal processing; Read only memory; Semiconductor films; Stress;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.119206
Filename
119206
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