Title :
Effect of hot-carrier injection on n- and pMOSFET gate oxide integrity
Author :
Rosenbaum, Elyse ; Rofan, Reza ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
N- and pMOSFETs with 9-nm gate oxide are compared. Injected hot holes are about 100 times as effective as electrons at 10.5 MV/cm of oxide field in causing oxide breakdown. Gate current in nMOSFETs under stress conditions is due to holes and electrons. The gate current in pMOSFETs is about 1000 times as large, but solely due to electrons. PMOSFETs can tolerate 1000 times more charge injection than nMOSFETs, but not more drain current stress.<>
Keywords :
hot carriers; insulated gate field effect transistors; reliability; 9 nm; charge injection; drain current stress; gate current; gate oxide integrity; hot electron injection; hot electrons; hot hole injection; hot holes; hot-carrier injection; nMOSFETs; oxide breakdown; oxide field; pMOSFETs; stress conditions; Current measurement; Design for quality; Electric breakdown; Hot carrier injection; Hot carriers; MOS devices; MOSFET circuits; Stress; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
