Title :
Parameter sensitivity of narrow-channel MOSFET´s
Author :
Li, E. Herbert ; Ng, H.C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
Abstract :
An analytical method is used to examine the threshold voltage sensitivity due to various device parameter fluctuations in the narrow-channel MOSFETs. The analysis is based on a narrow-channel model with a semirecessed field-isolation structure and a short-channel modification. The results show that while the dopant-concentration and fixed-oxide charges fluctuation increases sensitivity, the back-gate bias fluctuation decreases sensitivity as the channel width is reduced. The present strategy is simple and is therefore ideal for miniaturized device processing simulation.<>
Keywords :
insulated gate field effect transistors; semiconductor device models; ULSI; VLSI; analytical method; back-gate bias fluctuation; channel width; device parameter fluctuations; dopant-concentration; fixed-oxide charges fluctuation; miniaturized device processing simulation; narrow-channel MOSFETs; narrow-channel model; parameter sensitivity; semirecessed field-isolation structure; short-channel modification; threshold voltage sensitivity; Analytical models; Circuit simulation; Doping; Fabrication; Fluctuations; MOSFET circuits; Performance analysis; Semiconductor process modeling; Sensitivity analysis; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
