Title :
The combined effects of low pressure NH/sub 3/-annealing and H/sub 2/ plasma hydrogenation on polysilicon thin-film transistors
Author :
Yang, Chien Kuo ; Lei, Tan Fu ; Lee, Chung Len
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The low pressure NH/sub 3/-annealing and the H/sub 2/ plasma hydrogenation were jointly used to improve the characteristics of polysilicon thin-film transistors (TFT´s). It was found that the TFT´s after applying the above treatments achieved better subthreshold swings, threshold voltages, field effect mobilities, off currents, and reliability. It is believed that the improvement was due to the gate oxynitride formation and the H/sub 2/-plasma had a better passivation effect on the oxynitride.<>
Keywords :
annealing; carrier mobility; elemental semiconductors; insulated gate field effect transistors; passivation; plasma applications; reliability; semiconductor technology; silicon; thin film transistors; H/sub 2/; H/sub 2/ plasma hydrogenation; NH/sub 3/; Si-SiNO; field effect mobilities; gate oxynitride formation; low pressure NH/sub 3/ annealing; offcurrents; passivation effect; polysilicon TFT; reliability; subthreshold swings; thin-film transistors; threshold voltages; Annealing; Hydrogen; Nitrogen; Passivation; Plasma devices; Plasma measurements; Plasma properties; Plasma sources; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
