DocumentCode
1173873
Title
Determination of the Si-SiO/sub 2/ barrier height from the Fowler-Nordheim plot
Author
Olivo, P. ; Suñé, J. ; Riccò, Bruno
Author_Institution
DEIS, Bologna Univ., Italy
Volume
12
Issue
11
fYear
1991
Firstpage
620
Lastpage
622
Abstract
It is shown that, even considering a field-dependent Si-SiO/sub 2/ barrier height for electron tunneling as predicted by the quantum-mechanical (QM) modeling of Si-SiO/sub 2/ interfaces, the Fowler-Nordheim (F-N) plot is linear. It is proved that the equivalent barrier height extracted from the graph slope is not representative of the actual field-dependent barrier. The problem of correctly estimating the oxide field to be used in F-N plots is also addressed.<>
Keywords
elemental semiconductors; semiconductor-insulator boundaries; silicon; silicon compounds; Fowler-Nordheim plot; Si-SiO/sub 2/ interfaces; electron tunneling; equivalent barrier height; field-dependent Si-SiO/sub 2/ barrier height; field-dependent barrier; oxide field estimation; quantum mechanical modelling; Current measurement; Electrons; Helium; MOS capacitors; Predictive models; Silicon; Substrates; Thickness measurement; Tunneling; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.119217
Filename
119217
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