A comprehensive CMOS APS crosstalk study: photoresponse model, technology, and design trends

Author

Shcherback, Igor ; Danov, Tatiana ; Yadid-Pecht, Orly

Author_Institution

VLSI Syst. Center, Ben-Gurion Univ., Beer-Sheva, Israel

Volume

51

Issue

12

fYear

2004

Firstpage

2033

Lastpage

2041

Abstract

In this paper the lateral photoresponse and crosstalk (CTK) in complementary metal-oxide-semiconductor (CMOS) photodiodes is investigated by means of a unique sub-micron scanning system (S-cube system) and numerical device simulation. An improved semi-analytical model developed for photoresponse estimation of a photodiode-based CMOS active pixel sensor reveals the photosignal and the CTK dependence on the pixels geometrical shape and arrangement within the array. The trends that promise to increase CMOS image sensor performance are presented and design tradeoffs intended to optimize the photoresponse and minimize CTK are discussed.

Keywords

CMOS image sensors; optical crosstalk; photodiodes; CMOS active pixel sensor; CMOS image sensor; S-cube system; complementary metal-oxide-semiconductor photodiodes; crosstalk minimization; diffusion process; parameter estimation; photoresponse estimation; photoresponse optimization; pixel geometrical shape; submicron scanning system; Active shape model; CMOS image sensors; CMOS technology; Crosstalk; Design optimization; Numerical simulation; Photodiodes; Semiconductor device modeling; Sensor arrays; Solid modeling; 65; APS; Active pixel sensor; CMOS image sensor; crosstalk; diffusion process; modeling; parameter estimation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.839742

Filename

1362964