Title :
Thermally and electrically isolated single crystal silicon structures in CMOS technology
Author :
Reay, Richard J. ; Klaassen, Erno H. ; Kovacs, Gregory T A
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
Abstract :
Thermally and electrically isolated single crystal silicon structures have been fabricated using a post-processing anisotropic tetramethyl ammonium hydroxide (TMAH) electrochemical etch. The process was carried out on CMOS circuits fabricated by a commercial foundry. Since the etch consists of a single micromachining step performed on packaged and bonded dice, this technique has the potential for cost-effective prototyping and production of integrated sensors and circuits.<>
Keywords :
CMOS integrated circuits; elemental semiconductors; etching; integrated circuit technology; silicon; CMOS technology; Si; TMAH; electrical isolation; electrochemical etching; micromachining step; post-processing anisotropic etch; single crystal Si structures; tetramethyl ammonium hydroxide; thermal isolation; Anisotropic magnetoresistance; Bonding; CMOS process; Circuits; Etching; Foundries; Micromachining; Packaging; Prototypes; Silicon;
Journal_Title :
Electron Device Letters, IEEE
