Title :
SiGe pMOSFET´s with gate oxide fabricated by microwave electron cyclotron resonance plasma processing
Author :
Li, Peter W. ; Yang, E.S. ; Yang, Y.F. ; Chu, J.O. ; Meyerson, B.S.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Abstract :
A new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate-quality oxide directly on SiGe alloys. One μm Al gate Si/sub 0.86/Ge/sub 0.15/ p-metal-oxide-semiconductor field-effect-transistors (pMOSFET´s) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm2/V-s at 300 K and 530 cm2/V-s at 77 K have been obtained.
Keywords :
Ge-Si alloys; carrier mobility; insulated gate field effect transistors; oxidation; plasma radiofrequency heating; semiconductor materials; semiconductor technology; 1 micron; 300 K; 77 K; SiGe; gate oxide; low field hole mobilities; microwave electron cyclotron resonance; pMOSFETs; plasma oxidation; plasma processing; saturation transconductance; CMOS logic circuits; Cyclotrons; Electrons; Fabrication; Germanium silicon alloys; MOSFET circuits; Oxidation; Plasma materials processing; Resonance; Silicon germanium;
Journal_Title :
Electron Device Letters, IEEE
