Title :
4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz
Author :
Weitzel, C.E. ; Palmour, J.W. ; Carter, C.H. ; Nordquist, K.J.
Author_Institution :
Phoenix Corp. Res. Labs., Motorola Inc., Tempe, AZ, USA
Abstract :
MESFET´s were fabricated using 4H-SiC substrates and epitaxy. The D.C., S-parameter, and output power characteristics of the 0.7 μm gate length, 332 μm gate width MESFET´s were measured. At /spl nu//sub ds/=25 V the current density was about 300 mA/mm and the maximum transconductance was in the range of 38-42 mS/mm. The device had 9.3 dB gain at 5 GHz and fmax=12.9 GHz. At V/sub ds/=54 V the power density was 2.8 W/mm with a power added efficiency=12.7%.
Keywords :
S-parameters; Schottky gate field effect transistors; microwave measurement; power transistors; semiconductor materials; silicon compounds; solid-state microwave devices; 0.7 micron; 1.8 GHz; 12.7 percent; 5 GHz; 9.3 dB; DC characteristics; MESFET; S-parameter characteristics; SiC; current density; high power microwave devices; maximum transconductance; output power characteristics; power added efficiency; power density; Current density; Epitaxial growth; Gain; Length measurement; MESFETs; Power generation; Power measurement; Scattering parameters; Substrates; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
