Title :
Improved turn-on characteristics of a hot electron transistor at 300 K
Author :
Moise, Theodore S. ; Kao, Yung-Chung ; Seabaugh, Alan C.
Author_Institution :
Corp. Res. & Dev., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Through compositional grading of the collector, we have significantly reduced both the offset and saturation voltage of a tunneling hot-electron transfer amplifier relative to a similar transistor with a fixed composition collector structure. In the absence of a collector-base voltage, the electric field produced by the compositional grading improves the collection efficiency of ballistic electrons transported across the base.<>
Keywords :
bipolar transistors; high field effects; hot carriers; hot electron transistors; 300 K; ballistic electrons; collection efficiency; compositional collector grading; electric field; hot electron transistor; offset voltage; saturation voltage; tunneling hot-electron transfer amplifier; turn-on characteristics; Acceleration; Capacitance; Electron emission; Low voltage; Poisson equations; Potential energy; Research and development; Scattering; Temperature; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
