The correlation between gate current and substrate current in 0.1 μm NMOSFET´s

Author

Hang Hu ; Jacobs, J.B. ; Chung, J.E. ; Antoniadis, D.A.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

15

Issue

10

fYear

1994

Firstpage

418

Lastpage

420

Abstract

The correlation between gate and substrate currents in NMOSFET´s with effective channel length, L/sub eff/, down to 0.1 μm is investigated within the general framework of the lucky-electron model. It Is found that the correlation coefficient, /spl Phi/b//spl Phi//sub i/, decreases with decreasing L/sub eff/ in the 0.1 μm regime, where /spl Phi//sub b/ is the effective Si-SiO₂ barrier height for channel hot-electrons, and /spl Phi//sub i/ is the effective threshold potential for impact ionization. Furthermore, this effect becomes stronger in NMOSFET´s with shorter L/sub eff/. These experimental results suggest the need for further investigation on specific assumptions in the lucky-electron model to understand hot-electron behavior and impact ionization-mechanisms in 0.1 μm-scale NMOSFET´s.

Keywords

hot carriers; impact ionisation; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; silicon compounds; 0.1 micron; NMOSFETs; Si-SiO/sub 2/; Si-SiO/sub 2/ barrier height; channel hot-electrons; correlation coefficient; effective channel length; effective threshold potential; gate current; hot-electron behavior; impact ionization; lucky-electron model; substrate current; CMOS technology; Current measurement; Degradation; Electrons; Equations; Hot carriers; Implants; Jacobian matrices; MOSFET circuits; Semiconductor device modeling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.320987

Filename

320987