MOS characteristics of ultrathin NO-grown oxynitrides

Author

Bhat, M. ; Kim, J. ; Yan, J. ; Yoon, G.W. ; Han, L.K. ; Kwong, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

15

Issue

10

fYear

1994

Firstpage

421

Lastpage

423

Abstract

In this paper, we report for the first time, the growth of high quality ultrathin oxynitrides formed by nitridation of SiO/sub 2/ in nitric oxide (NO) ambient using in-situ rapid thermal processing (RTP). This process is highly self-limited compared with N/sub 2/O oxidation of silicon. A significant improvement in the interface endurance and charge trapping properties, under constant current stress, compared to pure O/sub 2/-grown and N/sub 2/O-grown oxides is observed. The NO growth process will have a great impact on future CMOS and EEPROM technologies.<>

Keywords

CMOS integrated circuits; EPROM; MOS integrated circuits; electron traps; insulated gate field effect transistors; metal-insulator-semiconductor devices; nitridation; rapid thermal processing; CMOS; EEPROM technologies; MOS capacitors; MOS characteristics; NO; NO ambient; charge trapping properties; constant current stress; in-situ rapid thermal processing; interface endurance; nitridation; ultrathin oxynitrides; Bonding; CMOS technology; Chemical technology; Dielectric substrates; MOS capacitors; Oxidation; Silicon; Temperature; Thermal resistance; Thermal stresses;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.320988

Filename

320988