Thermal oxidation of 6H-silicon carbide at enhanced growth rates

Author

Alok, Dev ; Baliga, B.Jayant ; McLarty, Peter K.

Author_Institution

Power Semicond. Res. Centre, North Carolina State Univ., Raleigh, NC, USA

Volume

15

Issue

10

fYear

1994

Firstpage

424

Lastpage

426

Abstract

A new oxidation scheme with enhanced growth rate for silicon carbide is reported in this paper. It is based upon the formation of a thick amorphous layer created using high dose ion implantation followed by thermal oxidation. The oxide thickness has been demonstrated to be larger in the amorphized region when compared to the unimplanted (monocrystalline SiC) region. The breakdown field strength of this oxide (8 MV/cm) is comparable to that obtained for thermal oxide grown on silicon. C-V measurements indicate the presence of large negative charge in the oxide grown using this method.<>

Keywords

amorphous semiconductors; characteristics measurement; electric strength; insulated gate field effect transistors; ion implantation; oxidation; power transistors; semiconductor materials; silicon compounds; 6H-silicon carbide; C-V measurements; SiC; breakdown field strength; growth rates; high dose ion implantation; large negative charge; oxide thickness; thermal oxidation; thick amorphous layer; Amorphous materials; Amorphous silicon; Argon; Implants; Ion implantation; Oxidation; Plasma temperature; Silicon carbide; Substrates; Thickness measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.320989

Filename

320989